MG50Q6ES51 Toshiba - GTR Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 50 A, 1200V

MG50Q6ES51 Toshiba GTR

Price: $195.00

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MG50Q6ES51 Description

Toshiba makes the MG50Q6ES51, a 1200 V, 50 A IGBT module. It is built with six switches arranged as a three-phase bridge (6-in-1). It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies. If you are repairing older equipment, we can usually find this exact part, including date codes that are no longer in production.

We help engineers and repair technicians find parts like the MG50Q6ES51, including obsolete ones. Send a quick RFQ for current pricing and delivery. Before ordering, please confirm ratings and pin-out with the official datasheet.

Summary of Features

MG50Q6ES51 TOSHIBA GTR MODULE

Target Applications

Toshiba MG50Q6ES51 is used for HIGH SWITCH APPLICATIONS, MOTOR CONTROL.

Key Specifications

ManufacturerToshiba
ConfigurationSix-pack IGBT module (6 IGBTs in 1 package)
PackageToshiba 2-108E1A
Voltage / current class1200 V (Q) / 50 A
Weight185 g

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