MG50Q6ES11 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 50A/1200V

MG50Q6ES11 GTR module from Toshiba

Representative image – actual product may differ

We beat competitor's price with faster delivery.

For 6 pieces or more, submit your inquiry here, email to sales@uscomponent.com or call 1-281-968-0718

MG50Q6ES11 Description

The MG50Q6ES11 from Toshiba is a bipolar power transistor module with a 1200 V / 50 A rating. Modules of this type were widely used in motor drives, UPS units and power supplies, and many are still running in older equipment today.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the MG50Q6ES11 and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Summary of Features

N Channel IGBT (High Power Switching / Motor Control Applications)

Target Applications

Toshiba MG50Q6ES11 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryGTR module
Rated voltage1200 V
Rated current50 A