MG50Q6ES11Toshiba - GTR module

Specifications: 50A/1200V

MG50Q6ES11 GTR module from Toshiba

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MG50Q6ES11 Description

The Toshiba MG50Q6ES11 is a bipolar power transistor module rated at 1200 V and 50 A, available from USComponent. This type of device is widely used in motor drives, switching regulators, UPS systems and power supplies, particularly in older equipment that is still in service.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG50Q6ES11.

Summary of Features

N Channel IGBT (High Power Switching / Motor Control Applications)

Target Applications

Toshiba MG50Q6ES11 is used for High Power Switching / Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryGTR module
Rated voltage1200 V
Rated current50 A

Download MG50Q6ES11 Datasheet

Datasheet not available