MG50Q6ES11 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 50A/1200V

MG50Q6ES11 GTR module from Toshiba

Representative image – actual product may differ

Availability and lead time are confirmed in our quote.

  • ✓ Quote within 24 hours
  • ✓ Original manufacturer parts, inspected before shipping
  • ✓ Credit cards and NET terms accepted

Or email sales@uscomponent.com or call 1-281-968-0718.

MG50Q6ES11 Description

The MG50Q6ES11 from Toshiba is a bipolar power transistor module with a 1200 V / 50 A rating. Modules of this type were widely used in motor drives, UPS units and power supplies, and many are still running in older equipment today.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the MG50Q6ES11 and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Summary of Features

N Channel IGBT (High Power Switching / Motor Control Applications)

Target Applications

Toshiba MG50Q6ES11 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryGTR module
Rated voltage1200 V
Rated current50 A

Related Part Numbers

MG50Q6ES40
1200V, 50A
MG50Q6ES41
1200V, 50A
MG50Q6ES50
1200V, 50A
MG50Q6ES51
50 A, 1200V
MG50Q6ES1
1200V, 50A
MG100Q6ES60
1200V, 100A
MG25Q6ES1
1200V, 25A
MG25Q6ES42
1200V, 25A
MG50Q6ES50A
1200V, 50A
MG50Q6ES51A
1200V, 50A
MG50Q2YS91
1200V, 50A
MG50Q2YS9
1200V, 50A
MG50Q2YS50
1200V, 78A
MG50Q2YS43
1200V, 50A
MG50Q2YS40
1200V, 50A
MG50Q2YK9
50 A, 1200 V