MG50Q6ES51A Toshiba - Power Transistor Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 50A

MG50Q6ES51A Toshiba Power Transistor Module

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MG50Q6ES51A Description

Toshiba MG50Q6ES51A is an IGBT / power transistor module. The module contains six switches arranged as a three-phase bridge (6-in-1). It was a workhorse in drives and power supplies before IGBTs took over, and it is still needed to repair that equipment.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG50Q6ES51A, and please confirm ratings against the datasheet before ordering.

Summary of Features

MG50Q6ES51A is a 1,200 V, 50 A IGBT / power transistor module, six-pack configuration.

Target Applications

Toshiba MG50Q6ES51A is used for high power switching and motor control applications.

Key Specifications

MG50Q6ES51A is a 1,200 V, 50 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSix-pack
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)50 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG50Q6ES51A (reply within 24 hours)

Related Part Numbers

MG50Q6ES50A
1200V, 50A		MG15Q6ES51AMG10Q6ES51AMG25Q6ES50A
1200V, 25A
MG15Q6ES50A
1200V / 15A		MG10Q6ES50A
1200V, 10A		MG50Q6ES51
50 A, 1200V		MG50Q6ES50
1200V, 50A
MG50Q6ES1MG50Q6ES11MG50Q6ES40MG50Q6ES41
MG50Q1BS1MG50Q1BS11MG50Q1ZS50MG50Q2YK1
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