MG50Q6ES51A Toshiba - IGBT Module

MG50Q6ES51A Description

Toshiba MG50Q6ES51A is an IGBT / power transistor module. The module contains six switches arranged as a three-phase bridge (6-in-1). It was a workhorse in drives and power supplies before IGBTs took over, and it is still needed to repair that equipment.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG50Q6ES51A, and please confirm ratings against the datasheet before ordering.

Summary of Features

Target Applications

Toshiba MG50Q6ES51A is used for high power switching and motor control applications.

Key Specifications

MG50Q6ES51A is a 1,200 V, 50 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Six-pack
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	50 A
Datasheet	Available on this page (PDF)

Technical document (PDF)  |  Request a quote for MG50Q6ES51A (reply within 24 hours)