MG50Q2YS50 Toshiba - Power Transistor Module

MG50Q2YS50 Description

Toshiba MG50Q2YS50 is an IGBT module rated at 1200 V. The module contains two switches in a half-bridge (2-in-1) arrangement. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the MG50Q2YS50, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Target Applications

Toshiba MG50Q2YS50 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

Manufacturer	Toshiba
Configuration	Dual IGBT module (complete half bridge) with free-wheeling diodes
Package	Toshiba 2-94D4A
VCES	1200 V
IC	78 A (TC = 25 °C) / 50 A (TC = 80 °C)
ICP	156 / 100 A (1 ms)
VCE(sat) max.	3.6 V
Collector power dissipation	400 W
Isolation voltage	2500 V (AC, 1 min)
Screw torque	Terminal / mounting: 3 / 3 N·m
Weight	202 g
Junction temperature	150 °C max.

MG50Q2YS50 Video

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