MG50Q2YS50Toshiba - Power Transistor Module

MG50Q2YS50 Description

The Toshiba MG50Q2YS50 is a power semiconductor module rated at 1200 V and 78 A, available from USComponent. Typical applications for this type of component include motor drives, power conversion and industrial control equipment.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG50Q2YS50.

Target Applications

Toshiba MG50Q2YS50 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

Manufacturer	Toshiba
Configuration	Dual IGBT module (complete half bridge) with free-wheeling diodes
Package	Toshiba 2-94D4A
VCES	1200 V
IC	78 A (TC = 25 °C) / 50 A (TC = 80 °C)
ICP	156 / 100 A (1 ms)
VCE(sat) max.	3.6 V
Collector power dissipation	400 W
Isolation voltage	2500 V (AC, 1 min)
Screw torque	Terminal / mounting: 3 / 3 N·m
Weight	202 g
Junction temperature	150 °C max.

MG50Q2YS50 Video

Download MG50Q2YS50 Datasheet

MG50Q2YS50 PDF Datasheet