MG50Q2YS40Toshiba - IGBT Module

Specifications: 1200V, 50A

MG50Q2YS40, TOSHIBA, GTR Module Silicon N Channel IGBT

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MG50Q2YS40 Description

Toshiba MG50Q2YS40 is an IGBT module rated at 1200 V and 50 A. Components of this type are commonly used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent specializes in sourcing power modules and industrial electronic components, including legacy and hard-to-find parts for repair and maintenance. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG50Q2YS40.

Target Applications

Toshiba MG50Q2YS40 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

ManufacturerToshiba
ConfigurationDual IGBT module (complete half bridge) with free-wheeling diodes
PackageToshiba 2-94D1A
VCES1200 V
IC50 A (DC)
ICP100 A (1 ms)
VCE(sat) max.4.0 V
Collector power dissipation400 W
Isolation voltage2500 V (AC, 1 min)
Screw torqueTerminal / mounting: 3 / 3 N·m
Weight202 g
Junction temperature150 °C max.

MG50Q2YS40 Video

Download MG50Q2YS40 Datasheet

MG50Q2YS40 PDF Datasheet