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MG25Q6ES51 Toshiba - GTR module
MG25Q6ES51 Description
MG25Q6ES51 is a GTR module, silicon N-channel IGBT, 6 IGBTs in 1 package from Toshiba, rated 1200V, 25A. Typical applications: High power switching applications and motor control applications.
USComponent supplies MG25Q6ES51 and other power semiconductors and power supplies, including discontinued types. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- The electrodes are isolated from case
- High input impedance
- 6 IGBTs built into 1 package
Target Applications
Toshiba MG25Q6ES51 is used for High power switching applications and motor control applications.
Key Specifications
MG25Q6ES51 is a GTR module, silicon N-channel IGBT, 6 IGBTs in 1 package from Toshiba, rated 1200V, 25A. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Manufacturer | Toshiba |
| Collector-emitter voltage VCES | 1200 V |
| Collector power dissipation (Tc = 25 °C) | 200 W |
| Isolation voltage | 2500 V (AC 1 min) |
| Package / weight | TOSHIBA 2-108E1A, 185 g |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for MG25Q6ES51 (reply within 24 hours)
Related Part Numbers
| MG25Q6ES50 1200V, 25A | MG25Q6ES43 1200V, 35A | MG25Q6ES42 1200V, 25A | MG25Q6ES40 1200V, 25A |
| MG15Q6ES51 1200V,15A | MG50Q6ES51 50 A, 1200V | MG10Q6ES51 1200V, 15A | MG15Q6ES45 1200V, 15A |
| MG25Q6ES50A 1200V, 25A | MG25Q6ES1 1200V, 25A | MG25Q2YYS40 | MG25Q2YS91 1200V, 25A |
| MG25Q2YS9 1200V, 25A | MG25Q2YS42 | MG25Q2YS40EP 1200V, 25A | MG25Q2YS40 1200V, 25A |
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