MG50Q2YS91 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 50A

MG50Q2YS91, Toshiba, Power Module

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MG50Q2YS91 Description

MG50Q2YS91 is a 1200 V, 50 A IGBT module made by Toshiba. It is built with two switches in a half-bridge (2-in-1) arrangement. Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters. Many of these parts are still in service in machines built years ago, and a direct replacement is often the fastest way to get one running again.

USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MG50Q2YS91; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.

Summary of Features

MG50Q2YS91 is a 1,200 V, 50 A IGBT / power transistor module, dual configuration.

Target Applications

Toshiba MG50Q2YS91 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG50Q2YS91 is a 1,200 V, 50 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationDual
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)50 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG50Q2YS91 (reply within 24 hours)

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