MG50Q2YS91 Toshiba - GTR module
MG50Q2YS91 Description
MG50Q2YS91 is a 1200 V, 50 A IGBT module made by Toshiba. It is built with two switches in a half-bridge (2-in-1) arrangement. Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters. Many of these parts are still in service in machines built years ago, and a direct replacement is often the fastest way to get one running again.
USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MG50Q2YS91; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.
Summary of Features
MG50Q2YS91 is a 1,200 V, 50 A IGBT / power transistor module, dual configuration.
Target Applications
Toshiba MG50Q2YS91 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.
Key Specifications
MG50Q2YS91 is a 1,200 V, 50 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | IGBT / power transistor module |
| Configuration | Dual |
| Collector-emitter voltage (VCES) | 1,200 V |
| Collector current (IC) | 50 A |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for MG50Q2YS91 (reply within 24 hours)
Related Part Numbers
| MG50Q2YS50 1200V, 78A | MG100Q2YS91 1200V, 100A | MG25Q2YS91 1200V, 25A | MG50Q2YS43 1200V, 50A |
| MG50Q2YS40 1200V, 50A | MG150Q2YS91 1200V, 150A | MG200Q2YS91 1200V, 200A | MG50Q2YS9 1200V, 50A |
| MG50Q2YK1 | MG50Q2YK9 | MG50Q1BS1 | MG50Q1BS11 |
| MG50Q1ZS50 | MG50Q6ES1 | MG50Q6ES11 | MG50Q6ES40 |

