MG100Q6ES60 Toshiba - IGBT Power Transistor Module

Category: IGBT Modules

Specifications: 1200V, 100A

MG100Q6ES60, Toshiba, Power Module

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MG100Q6ES60 Description

Toshiba MG100Q6ES60 is an IGBT module rated at 1200 V and 100 A. You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG100Q6ES60, and please confirm ratings against the datasheet before ordering.

Target Applications

Toshiba MG100Q6ES60 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1200 V
Rated current100 A

Related Part Numbers

MG50Q6ES1
1200V, 50A		MG50Q6ES11
50A/1200V		MG50Q6ES50
1200V, 50A		MG50Q6ES40
1200V, 50A
MG50Q6ES41
1200V, 50A		MG50Q6ES51
50 A, 1200V		MG25Q6ES1
1200V, 25A		MG25Q6ES42
1200V, 25A
MG100Q2ZS40
1200V, 100A		MG100Q2YS91
1200V, 100A		MG100Q2YS9
1200V, 100A		MG100Q2YS65H
1200V, 100A
MG100Q2YS51
1200V, 150A		MG100Q2YS50
1200V 150A		MG100Q2YS44
1200V, 100A		MG100Q2YS43
1200V, 100A
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