MG50Q6ES50A Toshiba - GTR module
MG50Q6ES50A Description
The MG50Q6ES50A from Toshiba is an IGBT module with a 1200 V / 50 A rating. It is built with six switches arranged as a three-phase bridge (6-in-1). Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters. Many of these parts are still in service in machines built years ago, and a direct replacement is often the fastest way to get one running again.
USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MG50Q6ES50A; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.
Summary of Features
MG50Q6ES50A is a 1,200 V, 50 A IGBT / power transistor module, six-pack configuration.
Target Applications
Toshiba MG50Q6ES50A is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.
Key Specifications
MG50Q6ES50A is a 1,200 V, 50 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | IGBT / power transistor module |
| Configuration | Six-pack |
| Collector-emitter voltage (VCES) | 1,200 V |
| Collector current (IC) | 50 A |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for MG50Q6ES50A (reply within 24 hours)
Related Part Numbers
| MG50Q6ES51A 1200V, 50A | MG25Q6ES50A 1200V, 25A | MG15Q6ES50A 1200V / 15A | MG10Q6ES50A 1200V, 10A |
| MG15Q6ES51A | MG10Q6ES51A | MG50Q6ES50 1200V, 50A | MG50Q6ES51 50 A, 1200V |
| MG50Q6ES1 | MG50Q6ES11 | MG50Q6ES40 | MG50Q6ES41 |
| MG50Q1BS1 | MG50Q1BS11 | MG50Q1ZS50 | MG50Q2YK1 |

