MG50Q6ES50A Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 50A

MG50Q6ES50A GTR module from Toshiba

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MG50Q6ES50A Description

The MG50Q6ES50A from Toshiba is an IGBT module with a 1200 V / 50 A rating. It is built with six switches arranged as a three-phase bridge (6-in-1). Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters. Many of these parts are still in service in machines built years ago, and a direct replacement is often the fastest way to get one running again.

USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MG50Q6ES50A; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.

Summary of Features

MG50Q6ES50A is a 1,200 V, 50 A IGBT / power transistor module, six-pack configuration.

Target Applications

Toshiba MG50Q6ES50A is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG50Q6ES50A is a 1,200 V, 50 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSix-pack
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)50 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG50Q6ES50A (reply within 24 hours)