MG15Q6ES51 Toshiba - IGBT Power Transistor Module
MG15Q6ES51 Description
MG15Q6ES51 is a 1200 V, 15 A IGBT module made by Toshiba. It is built with six switches arranged as a three-phase bridge (6-in-1). You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters.
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Summary of Features
MG15Q6ES51 is a 1,200 V, 15 A IGBT / power transistor module, six-pack configuration.
Target Applications
Toshiba MG15Q6ES51 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.
Key Specifications
MG15Q6ES51 is a 1,200 V, 15 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | IGBT / power transistor module |
| Configuration | Six-pack |
| Collector-emitter voltage (VCES) | 1,200 V |
| Collector current (IC) | 15 A |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for MG15Q6ES51 (reply within 24 hours)
Related Part Numbers
| MG15Q6ES50 1200V, 15A | MG15Q6ES45 1200V, 15A | MG15Q6ES42 1200V, 15A | MG15Q6ES40 1200V, 15A |
| MG10Q6ES51 1200V, 15A | MG25Q6ES51 1200V, 25A | MG50Q6ES51 50 A, 1200V | MG10Q6ES50 1200V, 10A |
| MG15Q6ES1 | MG15Q6ES50A | MG15Q6ES51A | MG1500FXF1US51 |
| MG150G2DL1 | MG150G2YL1 | MG150H1FL1 | MG150H2CK1 |

