MG50Q6ES40 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 50A

MG50Q6ES40 GTR module from Toshiba

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MG50Q6ES40 Description

The Toshiba MG50Q6ES40 is an IGBT module, rated for 1200 V and 50 A. Inside, it has six switches arranged as a three-phase bridge (6-in-1). It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies. If you are repairing older equipment, we can usually find this exact part, including date codes that are no longer in production.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the MG50Q6ES40 and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Summary of Features

N Channel IGBT (High Power Switching / Motor Control Applications)

Target Applications

Toshiba MG50Q6ES40 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
ConfigurationSix-pack IGBT module (6 IGBTs in one package)
PackageToshiba 2-94B1A
Voltage / current class1200 V (Q) / 50 A
VCE(sat) max.4.0 V
Fall time tf max.0.5 µs
Weight690 g

MG50Q6ES40 Video

MG50Q6ES40 video

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