MG10Q6ES51 Toshiba - IGBT Power Transistor Module
MG10Q6ES51 Description
Toshiba makes the MG10Q6ES51, a 1200 V IGBT module. Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters.
USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the MG10Q6ES51, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.
Target Applications
Toshiba MG10Q6ES51 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.
Key Specifications
| Manufacturer | Toshiba |
| Category | IGBT Power Transistor Module |
| Rated voltage | 1200 V |
| Rated current | 15 A |
Related Part Numbers
| MG10Q6ES50 1200V, 10A | MG15Q6ES51 1200V,15A | MG25Q6ES51 1200V, 25A | MG50Q6ES51 50 A, 1200V |
| MG8Q6ES40 1200V, 8A | MG8Q6ES42 1200V, 8A | MG8Q6ES1 1200V, 8A | MG15Q6ES45 1200V, 15A |
| MG10Q6EK1 | MG10Q6ES50A | MG10Q6ES51A | MG100G1AL1 |
| MG100G1AL2 | MG100G1AL2-4 | MG100G1AL3 | MG100G1AL3-5 |

