MG10Q6ES51Toshiba - IGBT Power Transistor Module

MG10Q6ES51 Description

Toshiba MG10Q6ES51 is an IGBT module rated at 1200 V and 15 A. Typical applications for this type of device include variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

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Target Applications

Toshiba MG10Q6ES51 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	1200 V
Rated current	15 A

Download MG10Q6ES51 Datasheet

Datasheet not available