MG10Q6ES51 Toshiba - IGBT Power Transistor Module

Category: IGBT Modules

Specifications: 1200V, 15A

MG10Q6ES51, Toshiba, Power Module

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MG10Q6ES51 Description

Toshiba makes the MG10Q6ES51, a 1200 V IGBT module. Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the MG10Q6ES51, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Target Applications

Toshiba MG10Q6ES51 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1200 V
Rated current15 A

Related Part Numbers

MG10Q6ES50
1200V, 10A		MG15Q6ES51
1200V,15A		MG25Q6ES51
1200V, 25A		MG50Q6ES51
50 A, 1200V
MG8Q6ES40
1200V, 8A		MG8Q6ES42
1200V, 8A		MG8Q6ES1
1200V, 8A		MG15Q6ES45
1200V, 15A
MG10Q6EK1MG10Q6ES50AMG10Q6ES51AMG100G1AL1
MG100G1AL2MG100G1AL2-4MG100G1AL3MG100G1AL3-5
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