MG50Q6ES50 Toshiba - Power Transistor Module

MG50Q6ES50 Description

Toshiba makes the MG50Q6ES50, a 1200 V, 50 A IGBT / power transistor module. The module contains six switches arranged as a three-phase bridge (6-in-1). It was a workhorse in drives and power supplies before IGBTs took over, and it is still needed to repair that equipment.

We help engineers and repair technicians find parts like the MG50Q6ES50, including obsolete ones. Send a quick RFQ for current pricing and delivery. Before ordering, please confirm ratings and pin-out with the official datasheet.

Summary of Features

Target Applications

Toshiba MG50Q6ES50 is used for High Power Switching.

Key Specifications

MG50Q6ES50 is a 1,200 V, 50 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Six-pack
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	50 A
Datasheet	Available on this page (PDF)

Technical document (PDF)  |  Request a quote for MG50Q6ES50 (reply within 24 hours)