MG25Q6ES1 Toshiba - IGBT Power Transistor Module

Category: IGBT Modules

Specifications: 1200V, 25A

MG25Q6ES1, Toshiba, Power Module

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MG25Q6ES1 Description

The Toshiba MG25Q6ES1 is an IGBT module, rated for 1200 V and 25 A. Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters.

Looking for a replacement MG25Q6ES1? USComponent can quote new and hard-to-find stock and ships worldwide. Request a quote for pricing and lead time, and double-check the datasheet to make sure it fits your application.

Target Applications

Toshiba MG25Q6ES1 is used for high power switching applications. Motor control applications.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1200 V
Rated current25 A

Related Part Numbers

MG15Q6ES1
15A/1200V		MG50Q6ES1
1200V, 50A		MG8Q6ES1
1200V, 8A		MG15Q6ES45
1200V, 15A
MG15Q6ES40
1200V, 15A		MG15Q6ES50
1200V, 15A		MG15Q6ES42
1200V, 15A		MG15Q6ES51
1200V,15A
MG25Q6ES40MG25Q6ES42MG25Q6ES43MG25Q6ES50
MG25Q6ES50AMG25Q6ES51MG25Q1BS1MG25Q1BS11
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