MG50Q2YK9Toshiba - IGBT Power Transistor Module

Specifications: 50 A, 1200 V

MG50Q2YK9 IGBT Power Transistor Module from Toshiba

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MG50Q2YK9 Description

The Toshiba MG50Q2YK9 is an IGBT module rated at 1200 V and 50 A. This type of device is widely used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

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Summary of Features

2 CHANNEL, NPN, Si, POWER TRANSISTOR

Target Applications

Toshiba MG50Q2YK9 is used for High Power Switching / Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1200 V
Rated current50 A

Download MG50Q2YK9 Datasheet

Datasheet not available