MG25Q6ES42 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 25A

MG25Q6ES42, Toshiba, Power Module

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MG25Q6ES42 Description

The MG25Q6ES42 from Toshiba is an IGBT module with a 1200 V / 25 A rating. Inside, it has six switches arranged as a three-phase bridge (6-in-1). Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters. If you are repairing older equipment, we can usually find this exact part, including date codes that are no longer in production.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG25Q6ES42, and please confirm ratings against the datasheet before ordering.

Summary of Features

MG25Q6ES42 is a 1,200 V, 25 A IGBT / power transistor module, six-pack configuration.

Target Applications

Toshiba MG25Q6ES42 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG25Q6ES42 is a 1,200 V, 25 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSix-pack
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)25 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG25Q6ES42 (reply within 24 hours)