MG15Q6ES50AToshiba - Power Transistor Module

Specifications: 1200(V) / 25(A)

MG15Q6ES50A IGBT MODULE from Toshiba

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MG15Q6ES50A Description

Toshiba MG15Q6ES50A is a power semiconductor module rated at 1200 V and 25 A. Typical applications for this type of component include motor drives, power conversion and industrial control equipment.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG15Q6ES50A.

Summary of Features

IGBT Module

Target Applications

Toshiba MG15Q6ES50A is used for High Power Switching and Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryPower Transistor Modules
Rated voltage1200 V
Rated current25 A

Download MG15Q6ES50A Datasheet

MG15Q6ES50A PDF Datasheet