MG15Q6ES50A Toshiba - Power Transistor Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200(V) / 15(A)

MG15Q6ES50A IGBT MODULE from Toshiba

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MG15Q6ES50A Description

The MG15Q6ES50A from Toshiba is an IGBT / power transistor module with a 1200 V rating. Inside, it has six switches arranged as a three-phase bridge (6-in-1). You will mostly see it in older AC drives, servo amplifiers and UPS systems, where a like-for-like replacement keeps the machine running.

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Summary of Features

MG15Q6ES50A is a 1,200 V, 15 A IGBT / power transistor module, six-pack configuration.

Target Applications

Toshiba MG15Q6ES50A is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG15Q6ES50A is a 1,200 V, 15 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSix-pack
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)15 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG15Q6ES50A (reply within 24 hours)