MG600J1US51Toshiba - IGBT Power Transistor Module

Specifications: 600V, 600A

MG600J1US51, Toshiba, Power Module

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MG600J1US51 Description

The Toshiba MG600J1US51 is an IGBT module rated at 600 V and 600 A, available from USComponent. Typical applications for this type of device include variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG600J1US51.

Target Applications

Toshiba MG600J1US51 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage600 V
Rated current600 A

Download MG600J1US51 Datasheet

Datasheet not available