MG25Q6ES50AToshiba - IGBT Power Transistor Module

MG25Q6ES50A Description

The Toshiba MG25Q6ES50A is an IGBT module rated at 1200 V and 25 A, available from USComponent. Typical applications for this type of device include variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG25Q6ES50A.

Target Applications

Toshiba MG25Q6ES50A is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	1200 V
Rated current	25 A

Download MG25Q6ES50A Datasheet

MG25Q6ES50A PDF Datasheet