MG25Q6ES50A Toshiba - IGBT Power Transistor Module

MG25Q6ES50A Description

Toshiba makes the MG25Q6ES50A, a 1200 V, 25 A IGBT module. Inside, it has six switches arranged as a three-phase bridge (6-in-1). You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters. Many of these parts are still in service in machines built years ago, and a direct replacement is often the fastest way to get one running again.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the MG25Q6ES50A and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Summary of Features

Target Applications

Toshiba MG25Q6ES50A is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

MG25Q6ES50A is a 1,200 V, 25 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Six-pack
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	25 A
Datasheet	Available on this page (PDF)

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