MG10Q6ES50A Toshiba - IGBT Power Transistor Module

MG10Q6ES50A Description

The Toshiba MG10Q6ES50A is an IGBT module, rated for 1200 V and 10 A. It is built with six switches arranged as a three-phase bridge (6-in-1). Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment. Production of many older modules has ended, but we keep sourcing them for repair and maintenance customers.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the MG10Q6ES50A, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Summary of Features

Target Applications

Toshiba MG10Q6ES50A is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG10Q6ES50A is a 1,200 V, 10 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Six-pack
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	10 A
Datasheet	Available on this page (PDF)

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