MG10Q6ES50AToshiba - IGBT Power Transistor Module

MG10Q6ES50A Description

Toshiba MG10Q6ES50A is an IGBT module rated at 1200 V and 10 A. Components of this type are commonly used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent specializes in sourcing power modules and industrial electronic components, including legacy and hard-to-find parts for repair and maintenance. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG10Q6ES50A.

Target Applications

Toshiba MG10Q6ES50A is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	1200 V
Rated current	10 A

Download MG10Q6ES50A Datasheet

MG10Q6ES50A PDF Datasheet