MG10Q6ES50 Toshiba - IGBT Power Transistor Module

MG10Q6ES50 Description

Rated at 1200 V, the Toshiba MG10Q6ES50 is an IGBT module. It is built with six switches arranged as a three-phase bridge (6-in-1). Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment. Many of these parts are still in service in machines built years ago, and a direct replacement is often the fastest way to get one running again.

Request a quote for the MG10Q6ES50 and our team will get back to you with price, quantity available and lead time. We ship worldwide. As with any power device, please check the manufacturer's datasheet to confirm it matches your design.

Summary of Features

Target Applications

Toshiba MG10Q6ES50 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG10Q6ES50 is a 1,200 V, 10 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Six-pack
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	10 A
Datasheet	Available on this page (PDF)