MG8Q6ES40 Toshiba - Power Transistor Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 8A

MG8Q6ES40, Toshiba, Power Module

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MG8Q6ES40 Description

The Toshiba MG8Q6ES40 is a Darlington transistor module, rated for 1200 V and 8 A. It was a workhorse in drives and power supplies before IGBTs took over, and it is still needed to repair that equipment.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the MG8Q6ES40, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Target Applications

Toshiba MG8Q6ES40 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryPower Transistor Modules
Rated voltage1200 V
Rated current8 A

Related Part Numbers

MG8Q6ES42
1200V, 8A		MG15Q6ES40
1200V, 15A		MG25Q6ES40
1200V, 25A		MG50Q6ES40
1200V, 50A
MG10Q6ES50
1200V, 10A		MG10Q6ES51
1200V, 15A		MG15Q6ES45
1200V, 15A		MG15Q6ES1
15A/1200V
MG8Q6ES1
1200V, 8A		MG8N6ES45
600V, 800A		MG8N6ES42
1000V, 8A		MG8N6ES40
1000V, 8A
MG8N6ES1
1000V, 8A		MG8J6ES40
600V, 8A		MG8J6ES1
600V, 8A		MG8G6M1
1200V, 500A
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