MG200Q2YS50 Toshiba - IGBT Module

MG200Q2YS50 Description

Toshiba makes the MG200Q2YS50, a 1200 V, 200 A IGBT module. It is built with two switches in a half-bridge (2-in-1) arrangement. It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the MG200Q2YS50, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Summary of Features

Target Applications

Toshiba MG200Q2YS50 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG200Q2YS50 is a 1,200 V, 200 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	200 A
Datasheet	Available on this page (PDF)

MG200Q2YS50 Video

Technical document (PDF)  |  Request a quote for MG200Q2YS50 (reply within 24 hours)