MG100Q2YS50 Toshiba - IGBT MODULE

MG100Q2YS50 Description

The Toshiba MG100Q2YS50 is an IGBT module, rated for 1200 V. Inside, it has two switches in a half-bridge (2-in-1) arrangement. You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters.

Request a quote for the MG100Q2YS50 and our team will get back to you with price, quantity available and lead time. We ship worldwide. As with any power device, please check the manufacturer's datasheet to confirm it matches your design.

Target Applications

Toshiba MG100Q2YS50 is used for High Power Switching.

Key Specifications

Manufacturer	Toshiba
Configuration	Dual IGBT module (complete half bridge) with free-wheeling diodes
Package	Toshiba 2-95A4A
VCES	1200 V
IC	150 A (TC = 25 °C) / 100 A (TC = 80 °C)
ICP	300 / 200 A (1 ms)
VCE(sat) max.	3.6 V
Collector power dissipation	660 W
Isolation voltage	2500 V (AC, 1 min)
Screw torque	Terminal / mounting: 3 / 3 N·m
Weight	255 g
Junction temperature	150 °C max.

MG100Q2YS50 Video

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