MG200Q2YS11 Toshiba - IGBT Power Transistor Module

Category: IGBT Modules

Specifications: 1200V, 200A

MG200Q2YS11, TOSHIBA, Half Bridge IGBT Power Module

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MG200Q2YS11 Description

Rated at 1200 V and 200 A, the Toshiba MG200Q2YS11 is an IGBT module. Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.

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Target Applications

Toshiba MG200Q2YS11 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1200 V
Rated current200 A

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