MG200Q2YS11Toshiba - IGBT Power Transistor Module

MG200Q2YS11 Description

The Toshiba MG200Q2YS11 is an IGBT module rated at 1200 V and 200 A. Typical applications for this type of device include variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

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Target Applications

Toshiba MG200Q2YS11 is used for High Power Switching and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	1200 V
Rated current	200 A

Download MG200Q2YS11 Datasheet

MG200Q2YS11 PDF Datasheet