MG200Q2YS11 Toshiba - IGBT Power Transistor Module

Category: IGBT Modules

Specifications: 1200V, 200A

MG200Q2YS11, TOSHIBA, Half Bridge IGBT Power Module

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MG200Q2YS11 Description

Rated at 1200 V and 200 A, the Toshiba MG200Q2YS11 is an IGBT module. Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.

Looking for a replacement MG200Q2YS11? USComponent can quote new and hard-to-find stock and ships worldwide. Request a quote for pricing and lead time, and double-check the datasheet to make sure it fits your application.

Target Applications

Toshiba MG200Q2YS11 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1200 V
Rated current200 A

Technical document (PDF)  |  Request a quote for MG200Q2YS11 (reply within 24 hours)

Related Part Numbers

MG200Q2YS9
1200V, 200A		MG150Q2YS11
1200V, 150A		MG100Q2YS11
1200V, 100A		MG75Q2YS11
1200V, 75A
MG200Q2YS40
1200V, 200A		MG200Q2YS43
1200V, 200A		MG200Q2YS50
1200V, 200A		MG200Q2YS91
1200V, 200A
MG200Q1JS11MG200Q1JS40MG200Q1JS43MG200Q1JS8
MG200Q1JS9MG200Q1UK1MG200Q1US1MG200Q1US11
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