MG200Q2YS40Toshiba - Power Transistor Module

MG200Q2YS40 Description

The Toshiba MG200Q2YS40 is a power semiconductor module rated at 1200 V and 200 A. Typical applications for this type of component include motor drives, power conversion and industrial control equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG200Q2YS40.

Target Applications

Toshiba MG200Q2YS40 is used for High Power Switching and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Configuration	Dual IGBT module (complete half bridge) with free-wheeling diodes
Package	Toshiba 2-109C1A
VCES	1200 V
IC	200 A (DC)
ICP	400 A (1 ms)
VCE(sat) max.	4.0 V
Weight	430 g
Junction temperature	150 °C max.

MG200Q2YS40 Video

Download MG200Q2YS40 Datasheet

MG200Q2YS40 PDF Datasheet