MG200Q2YS40 Toshiba - Power Transistor Module

MG200Q2YS40 Description

Rated at 1200 V and 200 A, the Toshiba MG200Q2YS40 is an IGBT module. Inside, it has two switches in a half-bridge (2-in-1) arrangement. Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters.

USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MG200Q2YS40; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.

Target Applications

Toshiba MG200Q2YS40 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

Manufacturer	Toshiba
Configuration	Dual IGBT module (complete half bridge) with free-wheeling diodes
Package	Toshiba 2-109C1A
VCES	1200 V
IC	200 A (DC)
ICP	400 A (1 ms)
VCE(sat) max.	4.0 V
Weight	430 g
Junction temperature	150 °C max.

MG200Q2YS40 Video

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