MG300Q2YS50 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 300A

MG300Q2YS50, Toshiba, Power Module

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MG300Q2YS50 Description

Toshiba MG300Q2YS50 is an IGBT module rated at 1200 V and 300 A. It is built with two switches in a half-bridge (2-in-1) arrangement. It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies.

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Target Applications

Toshiba MG300Q2YS50 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
ConfigurationDual IGBT module (complete half bridge) with free-wheeling diodes
PackageToshiba 2-109C4A
Voltage / current class1200 V (Q) / 300 A
VCE(sat) max.3.6 V
Fall time tf max.0.3 µs (inductive load)
Weight430 g

MG300Q2YS50 Video

MG300Q2YS50 video

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