MG200Q1US41 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 200A

MG200Q1US41, Toshiba, Power Module

We beat competitor's price with faster delivery.

For 6 pieces or more, submit your inquiry here, email to sales@uscomponent.com or call 1-281-968-0718

MG200Q1US41 Description

Toshiba MG200Q1US41 is an IGBT module rated at 1200 V and 200 A. Inside, it has a single switch with its freewheeling diode (1-in-1). Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the MG200Q1US41 and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Target Applications

Toshiba MG200Q1US41 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
ConfigurationSingle IGBT with free-wheeling diode
PackageToshiba 2-109A4A
VCES1200 V
IC200 A (DC)
ICP400 A (1 ms)
VCE(sat) max.4.0 V
Collector power dissipation1400 W
Isolation voltage2500 V (AC, 1 min)
Screw torqueTerminal M4 / M6 / mounting: 2 / 3 / 3 N·m
Weight465 g
Junction temperature150 °C max.

Technical document (PDF)  |  Request a quote for MG200Q1US41 (reply within 24 hours)