MG200Q1US41 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 200A

MG200Q1US41, Toshiba, Power Module

Availability and lead time are confirmed in our quote.

  • ✓ Quote within 24 hours
  • ✓ Original manufacturer parts, inspected before shipping
  • ✓ Credit cards and NET terms accepted

Or email sales@uscomponent.com or call 1-281-968-0718.

MG200Q1US41 Description

Toshiba MG200Q1US41 is an IGBT module rated at 1200 V and 200 A. Inside, it has a single switch with its freewheeling diode (1-in-1). Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the MG200Q1US41 and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Target Applications

Toshiba MG200Q1US41 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
ConfigurationSingle IGBT with free-wheeling diode
PackageToshiba 2-109A4A
VCES1200 V
IC200 A (DC)
ICP400 A (1 ms)
VCE(sat) max.4.0 V
Collector power dissipation1400 W
Isolation voltage2500 V (AC, 1 min)
Screw torqueTerminal M4 / M6 / mounting: 2 / 3 / 3 N·m
Weight465 g
Junction temperature150 °C max.

Technical document (PDF)  |  Request a quote for MG200Q1US41 (reply within 24 hours)

Related Part Numbers

MG200Q1US51
1200V, 200A
MG300Q1US41
1200V, 300A
MG200Q1US21
1200V, 600A
MG400Q1US41
1200V 400A
MG500Q1US41
1200V, 500A
MG600Q1US41
1900V, 600A
MG200Q1US11
200A/1200V
MG300Q1US21
1200(V) / 300(A)
MG200Q1ZS40
600V, 200A
MG200Q1US2
1200V, 200A
MG200Q2YS1
1200V, 200A
MG200Q2YS11
1200V, 200A
MG200Q1US1
1200V, 200A
MG200Q2YS40
1200V, 200A
MG200Q1UK1
1200V, 200A
MG200Q2YS43
1200V, 200A