MG150Q2YS50Toshiba - GTR module

MG150Q2YS50 Description

Toshiba MG150Q2YS50 is a bipolar power transistor module rated at 1200 V and 150 A. Typical applications for this type of device include motor drives, switching regulators, UPS systems and power supplies, particularly in older equipment that is still in service.

USComponent specializes in sourcing power modules and industrial electronic components, including legacy and hard-to-find parts for repair and maintenance. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG150Q2YS50.

Target Applications

Toshiba MG150Q2YS50 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Configuration	Dual IGBT module (complete half bridge) with free-wheeling diodes
Package	Toshiba 2-95A4A
VCES	1200 V
ICP	400 / 300 A (1 ms)
VCE(sat) max.	3.6 V
Screw torque	Terminal / mounting: 3 / 3 N·m
Weight	255 g
Junction temperature	150 °C max.

MG150Q2YS50 Video

Download MG150Q2YS50 Datasheet

MG150Q2YS50 PDF Datasheet