MG150Q2YS50 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 150A

MG150Q2YS50, Toshiba, Power Module

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MG150Q2YS50 Description

Rated at 1200 V and 150 A, the Toshiba MG150Q2YS50 is an IGBT module. It is built with two switches in a half-bridge (2-in-1) arrangement. It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies.

USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MG150Q2YS50; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.

Target Applications

Toshiba MG150Q2YS50 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
ConfigurationDual IGBT module (complete half bridge) with free-wheeling diodes
PackageToshiba 2-95A4A
VCES1200 V
ICP400 / 300 A (1 ms)
VCE(sat) max.3.6 V
Screw torqueTerminal / mounting: 3 / 3 N·m
Weight255 g
Junction temperature150 °C max.

MG150Q2YS50 Video

MG150Q2YS50 video

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