MG200Q1US51Toshiba - Power Transistor Module

MG200Q1US51 Description

Toshiba MG200Q1US51 is a power semiconductor module rated at 1200 V and 200 A. This type of component is widely used in motor drives, power conversion and industrial control equipment.

USComponent specializes in sourcing power modules and industrial electronic components, including legacy and hard-to-find parts for repair and maintenance. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG200Q1US51.

Target Applications

Toshiba MG200Q1US51 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

Manufacturer	Toshiba
Configuration	IGBT module
Package	Toshiba 2-109F1A
VCES	1200 V
ICP	600 / 400 A (1 ms)
VCE(sat) max.	3.6 V
Screw torque	Terminal M4 / M6 / mounting: 2 / 3 / 3 N·m
Weight	465 g
Junction temperature	150 °C max.

MG200Q1US51 Video

Download MG200Q1US51 Datasheet

MG200Q1US51 PDF Datasheet