MG200Q1US51 Toshiba - IGBT Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 200A

MG200Q1US51, Toshiba, Power Module

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MG200Q1US51 Description

MG200Q1US51 is a 1200 V, 200 A IGBT module made by Toshiba. You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG200Q1US51, and please confirm ratings against the datasheet before ordering.

Target Applications

Toshiba MG200Q1US51 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
ConfigurationIGBT module
PackageToshiba 2-109F1A
VCES1200 V
ICP600 / 400 A (1 ms)
VCE(sat) max.3.6 V
Screw torqueTerminal M4 / M6 / mounting: 2 / 3 / 3 N·m
Weight465 g
Junction temperature150 °C max.

MG200Q1US51 Video

MG200Q1US51 video

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Related Part Numbers

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