MG200Q1US51 Toshiba - Power Transistor Module

MG200Q1US51 Description

MG200Q1US51 is a 1200 V, 200 A IGBT module made by Toshiba. You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG200Q1US51, and please confirm ratings against the datasheet before ordering.

Target Applications

Toshiba MG200Q1US51 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

Manufacturer	Toshiba
Configuration	IGBT module
Package	Toshiba 2-109F1A
VCES	1200 V
ICP	600 / 400 A (1 ms)
VCE(sat) max.	3.6 V
Screw torque	Terminal M4 / M6 / mounting: 2 / 3 / 3 N·m
Weight	465 g
Junction temperature	150 °C max.

MG200Q1US51 Video

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