MG200Q2YS60A Toshiba - IGBT Power Transistor Module

MG200Q2YS60A Description

The Toshiba MG200Q2YS60A is an IGBT module, rated for 1200 V and 200 A. Inside, it has two switches in a half-bridge (2-in-1) arrangement. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

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Summary of Features

Target Applications

Toshiba MG200Q2YS60A is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG200Q2YS60A is a 1,200 V, 200 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	200 A
Datasheet	Available on this page (PDF)

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