MG200Q2YS65H Toshiba - Power Transistor Module

MG200Q2YS65H Description

The MG200Q2YS65H from Toshiba is an IGBT / power transistor module with a 1200 V / 200 A rating. Inside, it has two switches in a half-bridge (2-in-1) arrangement. It was a workhorse in drives and power supplies before IGBTs took over, and it is still needed to repair that equipment.

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Summary of Features

Target Applications

Toshiba MG200Q2YS65H is used for High Power and High Speed Switching.

Key Specifications

MG200Q2YS65H is a 1,200 V, 200 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	200 A
Datasheet	Available on this page (PDF)

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