MG200Q2YS50Toshiba - IGBT Module

Specifications: 1200V, 200A

MG200Q2YS50, TOSHIBA, GTR Module Silicon N Channel IGBT

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MG200Q2YS50 Description

The Toshiba MG200Q2YS50 is an IGBT module rated at 1200 V and 200 A. This type of device is widely used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG200Q2YS50.

Summary of Features

MG200Q2YS50 is a 1,200 V, 200 A IGBT / power transistor module, dual configuration.

Target Applications

Toshiba MG200Q2YS50 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG200Q2YS50 is a 1,200 V, 200 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationDual
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)200 A
DatasheetAvailable on this page (PDF)

MG200Q2YS50 Video

MG200Q2YS50 video

Download MG200Q2YS50 Datasheet

MG200Q2YS50 PDF Datasheet