MG200Q1UK1 Toshiba - IGBT Power Transistor Module

MG200Q1UK1 Description

MG200Q1UK1 is a 1200 V, 200 A IGBT module made by Toshiba. Inside, it has a single switch with its freewheeling diode (1-in-1). Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the MG200Q1UK1 and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Summary of Features

Target Applications

Toshiba MG200Q1UK1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG200Q1UK1 is a 1,200 V, 200 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Single
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	200 A
Datasheet	Available on this page (PDF)

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