MG200Q1UK1 Toshiba - Bipolar Transistor Module

Category: IGBT Modules

Specifications: 1200V, 200A

MG200Q1UK1, Toshiba, Power Module

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MG200Q1UK1 Description

MG200Q1UK1 is a 1200 V, 200 A IGBT module made by Toshiba. Inside, it has a single switch with its freewheeling diode (1-in-1). Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the MG200Q1UK1 and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Summary of Features

MG200Q1UK1 is a 1,200 V, 200 A IGBT / power transistor module, single configuration.

Target Applications

Toshiba MG200Q1UK1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG200Q1UK1 is a 1,200 V, 200 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSingle
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)200 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG200Q1UK1 (reply within 24 hours)

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