MG200M1FK1Toshiba - IGBT Power Transistor Module

MG200M1FK1 Description

Toshiba MG200M1FK1 is an IGBT module rated at 1000 V and 200 A. This type of device is widely used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent specializes in sourcing power modules and industrial electronic components, including legacy and hard-to-find parts for repair and maintenance. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG200M1FK1.

Target Applications

Toshiba MG200M1FK1 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	1000 V
Rated current	200 A

Download MG200M1FK1 Datasheet

MG200M1FK1 PDF Datasheet