MG200N1US1Toshiba - Power Transistor Module

MG200N1US1 Description

The Toshiba MG200N1US1 is a power semiconductor module rated at 1200 V and 200 A, available from USComponent. This type of component is widely used in motor drives, power conversion and industrial control equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG200N1US1.

Target Applications

Toshiba MG200N1US1 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

Manufacturer	Toshiba
Configuration	Single IGBT with free-wheeling diode (GTR module)
Package	Toshiba 2-109A4A
VCES	1000 V
IC	200 A (DC)
ICP	400 A (1 ms)
VCE(sat) max.	5.0 V
Collector power dissipation	1200 W
Isolation voltage	2500 V (AC, 1 min)
Screw torque	Terminal / mounting: 30 / 30 kg·cm
Weight	490 g
Junction temperature	150 °C max.

Download MG200N1US1 Datasheet

MG200N1US1 PDF Datasheet