MG200N1US1 Toshiba - Power Transistor Module

MG200N1US1 Description

The Toshiba MG200N1US1 is an IGBT / power transistor module, rated for 1200 V and 200 A. It is built with a single switch with its freewheeling diode (1-in-1). Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MG200N1US1; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.

Summary of Features

Target Applications

Toshiba MG200N1US1 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG200N1US1 is a 1,000 V, 200 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Single
Collector-emitter voltage (VCES)	1,000 V
Collector current (IC)	200 A
Datasheet	Available on this page (PDF)

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