MG200Q1JS11 Toshiba - GTR module
MG200Q1JS11 Description
MG200Q1JS11 is a 1200 V, 200 A bipolar power transistor module made by Toshiba. Modules of this type were widely used in motor drives, UPS units and power supplies, and many are still running in older equipment today.
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Summary of Features
GTR Module: Silicon N-Channel IGBT
Target Applications
Toshiba MG200Q1JS11 is used for (High Power Switching / Motor Control Applications).
Key Specifications
| Manufacturer | Toshiba |
| Category | GTR module |
| Rated voltage | 1200 V |
| Rated current | 200 A |
Related Part Numbers
| MG200Q1JS9 1200V, 200A | MG200Q1JS8 600V, 200A | MG200Q1JS40 1200V, 200A | MG200Q1JS43 1200V, 200A |
| MG150Q1JS44 1200V, 150A | MG150Q1JS43 1200V, 150A | MG100Q1JS40 1200V, 100A | MG100Q1JS50 1200V / 100A |
| MG200Q1UK1 | MG200Q1US1 | MG200Q1US11 | MG200Q1US2 |
| MG200Q1US21 | MG200Q1US41 | MG200Q1US51 | MG200Q1ZS40 |

