MG200Q1JS11 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 200 Amp, 1200 Volt.

MG200Q1JS11 GTR module from Toshiba

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MG200Q1JS11 Description

MG200Q1JS11 is a 1200 V, 200 A bipolar power transistor module made by Toshiba. Modules of this type were widely used in motor drives, UPS units and power supplies, and many are still running in older equipment today.

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Summary of Features

GTR Module: Silicon N-Channel IGBT

Target Applications

Toshiba MG200Q1JS11 is used for (High Power Switching / Motor Control Applications).

Key Specifications

ManufacturerToshiba
CategoryGTR module
Rated voltage1200 V
Rated current200 A