MG200Q1JS11Toshiba - GTR module

Specifications: 200 Amp, 1200 Volt.

MG200Q1JS11 GTR module from Toshiba

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MG200Q1JS11 Description

Toshiba MG200Q1JS11 is a bipolar power transistor module rated at 1200 V and 200 A. Components of this type are commonly used in motor drives, switching regulators, UPS systems and power supplies, particularly in older equipment that is still in service.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG200Q1JS11.

Summary of Features

GTR Module: Silicon N-Channel IGBT

Target Applications

Toshiba MG200Q1JS11 is used for (High Power Switching / Motor Control Applications).

Key Specifications

ManufacturerToshiba
CategoryGTR module
Rated voltage1200 V
Rated current200 A

Download MG200Q1JS11 Datasheet

Datasheet not available