MG200Q1US11Toshiba - GTR module

Specifications: 200A/1200V

MG200Q1US11 GTR module from Toshiba

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MG200Q1US11 Description

The Toshiba MG200Q1US11 is a bipolar power transistor module rated at 1200 V and 200 A. Typical applications for this type of device include motor drives, switching regulators, UPS systems and power supplies, particularly in older equipment that is still in service.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG200Q1US11.

Summary of Features

N Channel IGBT (High Power Switching / Motor Control Applications)

Target Applications

Toshiba MG200Q1US11 is used for High Power Switching / Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryGTR module
Rated voltage1200 V
Rated current200 A

Download MG200Q1US11 Datasheet

Datasheet not available