MG200Q1US11 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 200A/1200V

MG200Q1US11 GTR module from Toshiba

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MG200Q1US11 Description

The MG200Q1US11 from Toshiba is a bipolar power transistor module with a 1200 V / 200 A rating. You will mostly see it in older AC drives, servo amplifiers and UPS systems, where a like-for-like replacement keeps the machine running.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the MG200Q1US11, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Summary of Features

N Channel IGBT (High Power Switching / Motor Control Applications)

Target Applications

Toshiba MG200Q1US11 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryGTR module
Rated voltage1200 V
Rated current200 A

Related Part Numbers

MG300Q1US11
1200V, 300A
MG200Q1US21
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MG400Q1US11
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MG500Q1US11
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MG200Q1US51
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MG200Q1US2
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MG200Q1US1
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MG200Q1JS8
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MG200Q2YS1
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1200V, 200A