MG200Q1US21Toshiba - IGBT Power Transistor Module

MG200Q1US21 Description

Toshiba MG200Q1US21 is an IGBT module rated at 1200 V and 600 A. Typical applications for this type of device include variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent specializes in sourcing power modules and industrial electronic components, including legacy and hard-to-find parts for repair and maintenance. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG200Q1US21.

Target Applications

Toshiba MG200Q1US21 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	1200 V
Rated current	600 A

Download MG200Q1US21 Datasheet

Datasheet not available