MG200H1AL1 Toshiba - Bipolar Transistor Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 200A

MG200H1AL1, Toshiba, Power Module

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MG200H1AL1 Description

The MG200H1AL1 from Toshiba is an IGBT module with a 1200 V / 200 A rating. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

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Summary of Features

MG200H1AL1 is a 200 A IGBT / power transistor module.

Target Applications

Toshiba MG200H1AL1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG200H1AL1 is a 200 A IGBT / power transistor module. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
Collector current (IC)200 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG200H1AL1 (reply within 24 hours)

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