MG200Q1JS40 Toshiba - GTR module
MG200Q1JS40 Description
MG200Q1JS40 is a 1200 V, 200 A IGBT module made by Toshiba. It is built with a single switch with its freewheeling diode (1-in-1). You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters.
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Summary of Features
MG200Q1JS40 is a 1,200 V, 200 A IGBT / power transistor module, single configuration.
Target Applications
Toshiba MG200Q1JS40 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.
Key Specifications
MG200Q1JS40 is a 1,200 V, 200 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | IGBT / power transistor module |
| Configuration | Single |
| Collector-emitter voltage (VCES) | 1,200 V |
| Collector current (IC) | 200 A |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for MG200Q1JS40 (reply within 24 hours)
Related Part Numbers
| MG200Q1JS43 1200V, 200A | MG100Q1JS40 1200V, 100A | MG75Q1JS40 1200V, 75A | MG200Q1JS11 |
| MG200Q1JS9 1200V, 200A | MG200Q1JS8 600V, 200A | MG150Q1JS44 1200V, 150A | MG150Q1JS43 1200V, 150A |
| MG200Q1UK1 | MG200Q1US1 | MG200Q1US11 | MG200Q1US2 |
| MG200Q1US21 | MG200Q1US41 | MG200Q1US51 | MG200Q1ZS40 |

