MG200Q1JS40 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 200A

MG200Q1JS40, Toshiba, Power Module

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MG200Q1JS40 Description

MG200Q1JS40 is a 1200 V, 200 A IGBT module made by Toshiba. It is built with a single switch with its freewheeling diode (1-in-1). You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters.

USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MG200Q1JS40; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.

Summary of Features

MG200Q1JS40 is a 1,200 V, 200 A IGBT / power transistor module, single configuration.

Target Applications

Toshiba MG200Q1JS40 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG200Q1JS40 is a 1,200 V, 200 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSingle
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)200 A
DatasheetAvailable on this page (PDF)

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