MG100Q1JS40 Toshiba - IGBT Power Transistor Module

MG100Q1JS40 Description

The MG100Q1JS40 from Toshiba is an IGBT module with a 1200 V / 100 A rating. It is built with a single switch with its freewheeling diode (1-in-1). You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters.

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Summary of Features

Target Applications

Toshiba MG100Q1JS40 is used for high power switching applications. Motor control applications.

Key Specifications

MG100Q1JS40 is a 1,200 V, 100 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Single
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	100 A
Datasheet	Available on this page (PDF)

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