MG75Q1JS40 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 75A

MG75Q1JS40, Toshiba, Power Module

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MG75Q1JS40 Description

The Toshiba MG75Q1JS40 is an IGBT module, rated for 1200 V and 75 A. Inside, it has a single switch with its freewheeling diode (1-in-1). You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters. Many of these parts are still in service in machines built years ago, and a direct replacement is often the fastest way to get one running again.

Request a quote for the MG75Q1JS40 and our team will get back to you with price, quantity available and lead time. We ship worldwide. As with any power device, please check the manufacturer's datasheet to confirm it matches your design.

Summary of Features

MG75Q1JS40 is a 1,200 V, 75 A IGBT / power transistor module, single configuration.

Target Applications

Toshiba MG75Q1JS40 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG75Q1JS40 is a 1,200 V, 75 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSingle
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)75 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG75Q1JS40 (reply within 24 hours)

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