MG10Q6EK1 Toshiba - IGBT Power Transistor Module

Category: IGBT Modules

Specifications: 900V,10A

MG10Q6EK1, Toshiba, Power Module

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MG10Q6EK1 Description

Rated at 900 V and 10 A, the Toshiba MG10Q6EK1 is an IGBT module. It is built with six switches arranged as a three-phase bridge (6-in-1). You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters. Many of these parts are still in service in machines built years ago, and a direct replacement is often the fastest way to get one running again.

Need the MG10Q6EK1? USComponent stocks and sources power modules for repair shops, OEMs and maintenance teams worldwide. Request a quote and we'll confirm availability and lead time. Always compare against the datasheet before ordering.

Summary of Features

MG10Q6EK1 is a 1,200 V, 10 A IGBT / power transistor module, six-pack configuration.

Target Applications

Toshiba MG10Q6EK1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG10Q6EK1 is a 1,200 V, 10 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSix-pack
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)10 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG10Q6EK1 (reply within 24 hours)