MG10Q6EK1 Toshiba - Bipolar Transistor Module

MG10Q6EK1 Description

Rated at 900 V and 10 A, the Toshiba MG10Q6EK1 is an IGBT module. It is built with six switches arranged as a three-phase bridge (6-in-1). You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters. Many of these parts are still in service in machines built years ago, and a direct replacement is often the fastest way to get one running again.

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Summary of Features

Target Applications

Toshiba MG10Q6EK1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG10Q6EK1 is a 1,200 V, 10 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Six-pack
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	10 A
Datasheet	Available on this page (PDF)

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