MG8Q6ES42 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 8A

MG8Q6ES42, Toshiba, Power Module

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MG8Q6ES42 Description

The MG8Q6ES42 from Toshiba is a bipolar power transistor module with a 1200 V / 8 A rating. It was a workhorse in drives and power supplies before IGBTs took over, and it is still needed to repair that equipment.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the MG8Q6ES42, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Target Applications

Toshiba MG8Q6ES42 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryGTR module
Rated voltage1200 V
Rated current8 A

Technical document (PDF)  |  Request a quote for MG8Q6ES42 (reply within 24 hours)

Related Part Numbers

MG8Q6ES40
1200V, 8A		MG15Q6ES42
1200V, 15A		MG25Q6ES42
1200V, 25A		MG10Q6ES50
1200V, 10A
MG10Q6ES51
1200V, 15A		MG15Q6ES45
1200V, 15A		MG15Q6ES1
15A/1200V		MG15Q6ES40
1200V, 15A
MG8Q6ES1MG800FXF1US53MG800J1US51MG800J1US52
MG800J1US52AMG800J1US59AMG800J2YS50AMG80S2YK1
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