MG8Q6ES42 Toshiba - IGBT Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 8A

MG8Q6ES42, Toshiba, Power Module

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MG8Q6ES42 Description

The MG8Q6ES42 from Toshiba is a bipolar power transistor module with a 1200 V / 8 A rating. It was a workhorse in drives and power supplies before IGBTs took over, and it is still needed to repair that equipment.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the MG8Q6ES42, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Target Applications

Toshiba MG8Q6ES42 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryIGBT Modules
Rated voltage1200 V
Rated current8 A

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Related Part Numbers

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