MG75Q2YS50Toshiba - IGBT Module

MG75Q2YS50 Description

The Toshiba MG75Q2YS50 is an IGBT module rated at 1200 V and 100 A. This type of device is widely used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

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Target Applications

Toshiba MG75Q2YS50 is used for High Power Switching and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Configuration	Dual IGBT module (complete half bridge) with free-wheeling diodes
Package	Toshiba 2-94D4A
VCES	1200 V
IC	100 A (TC = 25 °C) / 75 A (TC = 80 °C)
ICP	200 / 150 A (1 ms)
VCE(sat) max.	3.6 V
Collector power dissipation	600 W
Isolation voltage	2500 V (AC, 1 min)
Screw torque	Terminal / mounting: 3 / 3 N·m
Weight	202 g
Junction temperature	150 °C max.

MG75Q2YS50 Video

Download MG75Q2YS50 Datasheet

MG75Q2YS50 PDF Datasheet