MG75Q2YK1 Toshiba - Bipolar Transistor Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 75A

MG75Q2YK1 IGBT Power Transistor Module from Toshiba

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MG75Q2YK1 Description

MG75Q2YK1 is a 900 V, 75 A IGBT module made by Toshiba. Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.

USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MG75Q2YK1; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.

Target Applications

Toshiba MG75Q2YK1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryBipolar Transistor Module
Rated voltage1200 V
Rated current75 A

Technical document (PDF)  |  Request a quote for MG75Q2YK1 (reply within 24 hours)

Related Part Numbers

MG100Q2YK1
1200V, 100A		MG50Q2YK1
1200V, 50A		MG150Q2YK1
1200V, 150A		MG50Q2YK9
50 A, 1200 V
MG75Q2YS1
1200V, 75A		MG75Q2YS11
1200V, 75A		MG75Q2YS2
1200V, 75A		MG75Q2YS40
1200V, 75A
MG75Q2YS42
1200V, 75A		MG75Q2YS43
600V, 75A		MG75Q2YS44
600V, 75A		MG75Q2YS51
1200V, 75A
MG75Q2YS52
1200V, 75A		MG75Q2ZS50
1200V, 300A		MG75Q1ZS50
1200V, 75A		MG75Q1JS50
1200V, 75A
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