MG75Q1BS11Toshiba - IGBT Module

Specifications: 1200V, 75A

MG75Q1BS11, TOSHIBA, IGBT Module Silicon N Channel IGBT

Price: $30.00

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MG75Q1BS11 Description

Toshiba MG75Q1BS11 is an IGBT module rated at 1200 V and 75 A. This type of device is widely used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG75Q1BS11.

Target Applications

Toshiba MG75Q1BS11 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

ManufacturerToshiba
ConfigurationSingle IGBT module
PackageToshiba 2-33D2A
VCES1200 V
IC75 A (DC)
ICP150 A (1 ms)
VCE(sat) max.2.7 V @ 75 A (typ. 2.2 V)
Screw torqueTerminal / mounting: 2 / 3 N·m
Junction temperature150 °C max.

MG75Q1BS11 Video

MG75Q1BS11 video

Download MG75Q1BS11 Datasheet

MG75Q1BS11 PDF Datasheet