MG75Q2YS52 Toshiba - IGBT Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 75A

MG75Q2YS52, Toshiba, Power Module

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MG75Q2YS52 Description

MG75Q2YS52 is a 1200 V, 75 A IGBT / power transistor module made by Toshiba. Inside, it has two switches in a half-bridge (2-in-1) arrangement. Modules of this type were widely used in motor drives, UPS units and power supplies, and many are still running in older equipment today.

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Summary of Features

MG75Q2YS52 is a 1,200 V, 75 A IGBT / power transistor module, dual configuration.

Target Applications

Toshiba MG75Q2YS52 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG75Q2YS52 is a 1,200 V, 75 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationDual
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)75 A
DatasheetAvailable on this page (PDF)

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