MG75Q2YS51 Toshiba - IGBT Power Transistor Module

MG75Q2YS51 Description

Toshiba MG75Q2YS51 is an IGBT module rated at 1200 V and 75 A. The module contains two switches in a half-bridge (2-in-1) arrangement. Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG75Q2YS51, and please confirm ratings against the datasheet before ordering.

Summary of Features

Target Applications

Toshiba MG75Q2YS51 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG75Q2YS51 is a 1,200 V, 75 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	75 A
Datasheet	Available on this page (PDF)

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